Effects of a Diffuse Potential on Shallow-Donor States in GaAs-(Ga,Al)As Quantum Dots

1998 ◽  
Vol 208 (1) ◽  
pp. 51-59 ◽  
Author(s):  
F.J. Betancur ◽  
I.D. Mikhailov ◽  
J. Sierra
Keyword(s):  
Quantum Dots ◽  
Shallow Donor ◽  
Donor States

Confined electron and shallow donor states in graded GaAs/Al Ga As spherical quantum dots

2000 ◽  
Vol 14 (2) ◽  
pp. 337-348 ◽  
Author(s):  
Jian-Min Shi ◽  
V.N. Freire ◽  
G.A. Farias
Keyword(s):  
Quantum Dots ◽  
Shallow Donor ◽  
Donor States

Shallow donor states in GaAs-(Ga, Al)As quantum dots with different potential shapes

1998 ◽  
Vol 31 (23) ◽  
pp. 3391-3396 ◽  
Author(s):  
F J Betancur ◽  
I D Mikhailov ◽  
L E Oliveira
Keyword(s):  
Quantum Dots ◽  
Shallow Donor ◽  
Donor States

Shallow-donor states in spherical quantum dots with parabolic confinement

2001 ◽  
Vol 692 ◽  
Author(s):  
C. A. Duque ◽  
N. Porras-Montenegro ◽  
M. de Dios-Leyva ◽  
L. E. Oliveira
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Wires ◽  
Shallow Donor ◽  
Binding Energies ◽  
Good Representation ◽  
Barrier Potential ◽  
Parabolic Potential ◽  
Donor States ◽  
Parabolic Confinement

AbstractThe evidence of a parabolic potential well in quantum wires and dots was reported in the literature, and a parabolic potential is often considered to be a good representation of the “barrier” potential in semiconductor quantum dots. In the present work, the variational and fractionaldimensional space approaches are used in a thorough study of the binding energy of on-center shallow donors in spherical GaAs-Ga1-xAlxAs quantum dots with potential barriers taken either as rectangular [Vb (eV) ??1.247 x for r >] or parabolic [Vb (r) ??β2?r2] isotropic barriers. We define the parabolic potential with a β?parameter chosen so that it results in the same E0 groundstate energy as for the spherical quantum dot of radius R and rectangular potential in the absence of the impurity. Calculations using either the variational or fractional-dimensional approaches both for rectangular and parabolic potential result in essentially the same on-center binding energies provided the dot radius is not too small. This indicates that both potentials are alike representations of the quantum-dot barrier potential for a radius R quantum dot provided the parabolic potential is defined with?β?chosen as mentioned above.

Shallow Donor States in Semiconducting CdF2

1974 ◽  
Vol 66 (2) ◽  
pp. 537-545 ◽  
Author(s):  
J. M. Langer ◽  
T. Langer ◽  
G. L. Pearson ◽  
B. Krukowska-Fulde ◽  
U. Piekara
Keyword(s):  
Shallow Donor ◽  
Donor States

scholarly journals Влияние одноосной деформации в направлении [110] на релаксацию состояний мелких доноров мышьяка в германии

2020 ◽  
Vol 54 (9) ◽  
pp. 918
Author(s):  
В.В. Цыпленков ◽  
В.Н. Шастин
Keyword(s):  
Energy Levels ◽  
Optical Excitation ◽  
Uniaxial Stress ◽  
Shallow Donor ◽  
Stimulated Emission ◽  
Relaxation Rates ◽  
Emission Frequency ◽  
Donor States ◽  
Uniaxial Compressive Stress ◽  
Intracenter Transitions

Analysis of acoustical phonon assisted relaxation rates of arsenic donor states has been carried out in depends on uniaxial compressive stress of crystal along [110] direction under low temperature (< 10 K). As shown, under optical excitation the inversion population of donor energy levels is formed that depends on deformation of crystal. This give grounds to suppose that stimulated emission on arsenic shallow donor intracenter transitions in THz range is possible under optical excitation. As shown, uniaxial stress along [110] direction can result to switch laser transition and stimulated emission frequency

The Energy of Shallow Donor States in CdTe, GaAs, AgCl, AgBr Semiconductors

1985 ◽  
Vol 130 (1) ◽  
pp. 325-331 ◽  
Author(s):  
M. Grinberg ◽  
S. Łęgowski ◽  
H. Męczyńska
Keyword(s):  
Shallow Donor ◽  
Donor States

Shallow donor states induced in ZnSe:Au single crystals by lattice deformation

2008 ◽  
Vol 104 (12) ◽  
pp. 123717 ◽  
Author(s):  
N. D. Nedeoglo ◽  
D. D. Nedeoglo ◽  
V. P. Sirkeli ◽  
I. M. Tiginyanu ◽  
R. Laiho ◽  
...  
Keyword(s):  
Single Crystals ◽  
Shallow Donor ◽  
Lattice Deformation ◽  
Donor States

Defect controls by silicon doping in non-polar a-plane AlGaN epi-layers

2021 ◽  
Vol 11 (9) ◽  
pp. 1466-1475
Author(s):  
Tianlong He ◽  
Ming Tian ◽  
Junhua Yin ◽  
Shuai Chen ◽  
Lingyu Wan ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Structural Defects ◽  
Silicon Doping ◽  
Light Emitting ◽  
Si Doping ◽  
Carrier Recombination ◽  
Line Defects ◽  
Si Doped ◽  
Donor States ◽  
Uv Leds

Deposition of high-quality Si-doped crystalline AlGaN layers, especially non-polar-grown AlGaN layers, is critical and remains difficult in preparing AlGaN-based light-emitting diodes (LEDs), as the Si-doping-induced variations of crystalline structures are still under exploration. In this work, structural characterizations of Si-doped AlxGa1−xN layers were carried out by associating with examination of their carrier recombination behaviors in photoluminescence (PL) processes, to clarify the physical mechanism on how Si doping controls the formation of structural defects in AlGaN alloy. The obtained results showed that Si doping induced extrinsic shallow donor states and increased the densities of point defects like cation vacancies. On the contrary, Si doping suppressed formation of line defects like dislocations and planar defects like stacking faults with suitable doping concentration. These results may guide further improvement of UV-LEDs based on AlGaN alloy.

Sign in / Sign up

Export Citation Format

Share Document